STT-MRAM

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PM002MNxB

PM002 is a 2M Bit/256K Byte capacity SPI (Serial Single-Wire) interface STT-MRAM (Spin-Transfer Torque Magnetic Random Access Memory) chip. Its data is non-volatile with a retention time exceeding 10 years. The chip supports independent 1-bit SI (Serial Input) and SO(Serial Output) interfaces, allows continuous writing or reading of data bytes at its maximum clock frequency, and features zero write latency.

PM004MNIB

PM004 is a 4M Bit/512K Byte capacity SPI (Serial Single-Wire) interface STT-MRAM (Spin-Transfer Torque Magnetic Random Access Memory) chip. Its data is non-volatile with a retention time exceeding 10 years. The chip supports independent 1-bit SI (Serial Input) and SO (Serial Output) interfaces, allows continuous writing or reading of data bytes at its maximum clock frequency, and features zero write latency.

PM004MNEB

PN256KNIA

The PN256K is a 256K Bit/32K Byte IIC interface non-volatile memory. It adopts advanced PMTJ STT-MRAM technology to achieve read and write transmission of up to 400kHz, with excellent reliability and more than 20 years of data retention time.

PM002MNI

A novel non-volatile magnetic memory MRAM is an ideal device for non-volatile cache and main memory. The application prospect is not limited to the traditional computer storage system, but also can be extended to many other fields, and is even expected to become a general memory. MRAM ensures that data will not be lost in the case of power failure and can prevent data damage caused by rays. In emerging applications such as the Internet of Things and big data, ubiquitous sensor terminals need to collect massive data. In order to save storage power, MRAM has become a popular candidate for its relatively good performance.