Features
| Applications
|
Blog
Features
| Applications
|
| Item | Min | Max | Unit |
| Vin,EN,Voltage | -0.3 | 18 | V |
| Operating Temperature Range | -40 | +85 | ℃ |
| FB Voltages | -0.3 | 6 | V |
| Lead Temperature(Soldering,10s) | +260 | ℃ | |
| SW Voltage | -0.3 | VIN+0.5 | V |
| Storage Temperature Range | -55 | 150 | ℃ |
| BS Voltage | Vsw-0.3 | Vsw+5 | V |
| ESD(Machine Made)MM | ±250 | V | |
| ESD(Human Body Made)HBM | ±4 | KV | |
| Latch-up | ±200 | mA | |
| Thermal Resistance (θJA) | 105 | ℃/W | |
| Thermal Resistance(θJC) | 55 | ℃/W |
Note 1: Exceeding these ratings may damage the device.
Note 2: The device is not guaranteed to function outside of its operating conditions.
Electrical Characteristics(1) (2)
VIN=12V，TA=25°C,unless otherwise specified.
| Parameter | Test Conditions | Min | Typ | Max | Unit |
| Input Voltage Range | 3.5(3) | 16 | V | ||
| Supply Current (Quiescent) | VEN=3.0V | 0.6 | 0.8 | mA | |
| Supply Current (Shutdown) | VIN=5V, EN=GND | 10 | µA | ||
| VIN=12V, EN=GND | 24 | µA | |||
| Feedback Voltage | 0.585 | 0.600 | 0.615 | V | |
| High-Side Switch On-Resistance Low-Side Switch On-Resistance | ISW=100mA | 110 | 120 | mΩ | |
| ISW=-100mA | 70 | 80 | mΩ | ||
| Upper Switch Current Limit | 2.5 | 3 | 3.5 | A | |
| Over Voltage Protection Threshold | 18.6 | 19.5 | V | ||
| Switching Frequency | 400 | 500 | 600 | KHz | |
| Maximum Duty Cycle | VFB=90% | 97 | % | ||
| Minimum On-Time | 65 | 72 | 110 | nS | |
| EN Rising Threshold | 3.3 | V | |||
| EN Falling Threshold | 1.0 | V | |||
| Under-Voltage Lockout Threshold | Wake up VIN Voltage | 3.5 | 3.8 | V | |
| Soft Start | 4.0 | mS | |||
| Thermal Shutdown | 150 | 160 | ℃ | ||
| Thermal Hysteresis | 30 | ℃ |
Note (1): MOSFET on-resistance specifications are guaranteed by correlation to wafer level measurements. Note (2): Thermal shutdown specifications are guaranteed by correlation to the design and characteristics analysis.
Note (3): When the power supply voltage is between 3.5V and 4.5V, the output current of the chip will be limited. Under the condition of meeting the low dropout requirement, the maximum output current of the chip is approximately 1.5A.
Shanghai Siproin
Microelectronics Co.,Ltd.
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